Physics · Semiconductor Engineering
Sangwoo
Nam
M.S. in Physics.
A researcher interested in semiconductor devices, device physics and nanomaterials.
01 / About
Good Vibrations
For me, vibration is more than a physical phenomenon — it is a language connecting music, matter, and technology.
My love for drumming first drew me to vibration, and that curiosity eventually expanded into research on light, solids, and semiconductor devices.
From microscopic phonon physics to vibration-driven technologies like RF sputtering, I am fascinated by how vibration shapes both nature and innovation.
And if you're a fellow researcher with a deep appreciation for music, even better — I’m always ready to pick up my drumsticks.
Language & Tools
- Python · NumPy · SciPy
- Igor
- Vegas
- FL studio
Fabrication
- Photolithography
- Sputtering
- Thermal Evaporator
- Furnace
02 / Research
I Explore…
Semiconductor Devices
Device Physics
2D Materials
03 / Patents & Industry-Academia Collaboration
Professional Achievements
Patents
"Method for Doping Molybdenum Disulfide Thin Film with Aluminum Nitride, and Aluminum Nitride for the Same"
Moonsup Han, Sangwoo Nam et al. · US-Application No. 18/936,641
"Molybdenum Disulfide Thin Film Doping Methods with Aluminum Oxynitride"
Moonsup Han, Sangwoo Nam et al. · JP-Application No. 2024-188484
"알루미늄 질산화물을 통한 이황화 몰리브덴 박막의 도핑방법 및 이를 위한 알루미늄 질산화물"
Moonsup Han, Sangwoo Nam et al. · KR-Application No. 10-2024-0123236
Collaboration
- 2024
Samsung Electronics
Development of a multi-correlated spectroscopic analysis method to improve the reliability of CTF devices
04 / Publications & Presentations & Awards
Academic Activities
Publications
"Phonon-Assisted Charge Trapping and Threshold Voltage Modulation in MoS2 FETs with AlOxNy Overlayers"
Sangwoo Nam et al. · ACS Applied Materials & Interfaces, 17 (34), 48592-48599
DOI → doi.org/10.1021/acsami.5c07597"Charge Transfer Doping of MoS2 Field‐Effect Transistors by Aluminum Oxynitride Deposition"
Beomjin Park et al. · physica status solidi (a), 222 (24), e202500087
DOI → doi.org/10.1002/pssa.202500087"Ti-doping in Silicon Nitride: Enhanced Charge Trap Characteristics for Flash Memory"
Hanyeol Ahn et al. · ACS Applied Electronic Materials, 17 (34), 48592-48599
DOI → doi.org/10.1021/acsaelm.4c01919"Nano-mapping of vertical contact electrodes using synchrotron scanning photoelectron microscopy"
Minseon Gu et al. · Applied Surface Science, 655, 159605
DOI → doi.org/10.1016/j.apsusc.2024.159605Presentations
"Temperature Dependent Transport Properties of Charge Transfer Doped MoS2 FETs via AlOxNy Overlayer"
Sangwoo Nam · 2024 The Korean Physical Society (KPS) Spring Meeting
"Influence of AlOxNy overlayer on Mobility in 2D FET Channels"
Sangwoo Nam · 2023 The Korean Physical Society (KPS) Fall Meeting
Awards
Best Presentation Award · The Korean Physical Society (KPS)
Temperature Dependent Transport Properties of Charge Transfer Doped MoS2 FETs via AlOxNy Overlayer
05 / Contact
Let’s Build Good Vibrations
I welcome conversations about graduate school guidance, research collaborations, and career opportunities. Feel free to reach out by email, and I’ll get back to you within 48 hours.